SSD CORSAIR MP600 PRO Capacitate 2TB M.2 2280 NVME PCIE GEN4 x4
Viteza de scriere: pana la 6550MB/s Viteza de citire: pana la 7000MB/s
Temperatura de functionare: 0-70°C Temperatura de stocare: -40-85°C
Voltaj: 3.3V +/-5%
Tranzacțiile electronice sunt 100% sigure. Folosim protocolul HTTPS
Livrăm la cerere prin orice curier rapid sau de la sediu
SSD Corsair MP600 PRO 2TB M.2 NVMe PCIe 4 SSD Unformatted Capacity 2TB SSD Smart Support Yes Weight 0.034kg SSD Interface PCIe Gen 4.0 x4 SSD Max Sequential Read CDM Up to 7,000MB/s SSD Max Sequential Write CDM Up to 5,500MB/s Max Random Write QD32 IOMeter Up to 780K IOPS Max Random Read QD32 IOMeter Up to 360K IOPS Form Factor M.2 2280 Dimensions 80mm x 23mm x 15mm Application Consumer Client NAND Technology 3D TLC NAND Voltage 3.3V, +/- 5% Endurance 700TBW TBW 700 MTBF 1,700,000 Hours DEVSLP PS4: <2mW Encryption AES 256-bit Encryption Storage Temperature -40°C to +85°C SSD Operating Temperature 0°C to +70°C SSD Shock 1500 G Storage Humidity 93% RH (40° C) Operating Humidity 90% RH (40° C) Vibration 20Hz~80Hz/1.52mm, 80Hz~2000Hz/20G https://www.corsair.com/eu/en/Categories/Products/Storage/M-2- SSDs/MP600-PRO/p/CSSD-F2000GBMP600PRO
Kingston Technology Company, Inc. is the world’s independent memory leader. Founded in 1987 with a single product offering, Kingston now offers more than 2,000 memory products that support nearly every device that uses memory, from computers, servers a
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare960 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellAccesorii incl
Locatie dispozitivPlug-in CardFactor formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 4.0 x4Rata de transfer extern a datelor sustinuta8 GbpsTehnologia pentru memorieNAND FlashAccesorii incluseScurt Ghid de utilizareMaximum Random Re
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe 4.0 x4 (NVMe 1.3)Tehnologia pentru memorieDDR4 SDRAMFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate750000 IOPSMaximum Random Wr
Locația dispozitivuluiPlug-in ModuleFactorul de formăM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen5Tehnologia pentru memorie3D NANDFlash Memory Cell TechnologyTriple-Level CellCuloare externăNegruMaximum Random Read Rate1300000 I